LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION GROWTH AND CHARACTERIZATION OF DELTA-DOPED INP

被引：11

作者：

DIFORTEPOISSON, MA ^{[1
]}

BRYLINSKI, C ^{[1
]}

BLONDEAU, E ^{[1
]}

LAVIELLE, D ^{[1
]}

PORTAL, JC ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,CNRS,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：867 / 869

页数：3

共 8 条

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[8] ELECTRONIC SUBBANDS OF A DELTA-DOPING LAYER IN GAAS IN A PARALLEL MAGNETIC-FIELD [J].

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