ENHANCEMENT OF SUPERCONDUCTING TRANSITION-TEMPERATURE BY PHOTOCARRIERS IN INDIUM DOPED PB1-XSNXTE FILM WITH LEAD INCLUSION

被引：3

作者：

KOSHINDO, T

TAKAOKA, S

MURASE, K

机构：

[1] Department of Physics, Faculty of Science, Osaka University, Toyonaka, 560

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 76卷 / 01期

关键词：

D O I：

10.1016/0038-1098(90)90292-J

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electrical resistivity and the Hall coefficient of 1% In doped Pb1-XSnXTe (X=0.25) films with Pb precipitates are measured in the range of 1.5K<T<300K. In these films, the superconducting transition occurs below 6K because of the proximity effect by Pb grains. By exposure to light, a large photoconductivity excited from In impurity enhances the superconducting transition temperature. The enhancement will be understood by considering that the coherence length of superconductivity in semiconducting region is extended by the photo-carriers. © 1990.

引用

页码：31 / 34

页数：4

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