CHARACTERIZATION OF GAAS AND SI BY A MICROWAVE PHOTOCONDUCTANCE TECHNIQUE

被引：24

作者：

CUMMINGS, KD

PEARTON, SJ

VELLACOLEIRO, GP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.337257

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1676 / 1680

页数：5

共 8 条

[1] MICROWAVE CONTACTLESS TECHNIQUE FOR PHOTOCONDUCTIVITY MEASUREMENTS [J].

BHATNAGAR, PK ;

OJHA, VN .

SOLAR CELLS, 1983, 8 (02) :197-200

[2]

CUMMINGS KD, 1986, MATERIALS RES SOC S, V52, P375

[3] NON-DESTRUCTIVE CHARACTERIZATION OF ELECTRICAL UNIFORMITY IN SEMI-INSULATING GAAS SUBSTRATES BY MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J].

HASEGAWA, H ;

OHNO, H ;

SHIMIZU, H ;

SEKI, S .

JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) :931-948

[4] INHOMOGENEITY IN SEMI-INSULATING GAAS REVEALED BY SCANNING LEAKAGE CURRENT MEASUREMENTS [J].

MATSUMOTO, Y ;

WATANABE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08) :L515-L517

[5] LEAKAGE CURRENT IL VARIATION CORRELATED WITH DISLOCATION DENSITY IN UNDOPED, SEMI-INSULATING LEC-GAAS [J].

MIYAZAWA, S ;

MIZUTANI, T ;

YAMAZAKI, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (09) :L542-L544

[6] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS [J].

PEARTON, SJ ;

DAUTREMONTSMITH, WC ;

CHEVALLIER, J ;

TU, CW ;

CUMMINGS, KD .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) :2821-2827

[7] NON-DESTRUCTIVE DETERMINATION OF CR CONCENTRATION DISTRIBUTION IN CR DOPED SEMI-INSULATING GAAS SUBSTRATES [J].

SHIMIZU, H ;

OHNO, H ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (12) :L786-L788

[8]

[No title captured]

← 1 →