A 1/F NOISE TECHNIQUE TO EXTRACT THE OXIDE TRAP DENSITY NEAR THE CONDUCTION-BAND EDGE OF SILICON

被引:343
作者
JAYARAMAN, R [1 ]
SODINI, CG [1 ]
机构
[1] MIT, DEPT ELECT ENGN & COMP SCI, CAMBRIDGE, MA 02139 USA
关键词
D O I
10.1109/16.34242
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1773 / 1782
页数:10
相关论文
共 33 条
[1]   SURFACE STATES AND 1/F NOISE IN MOS TRANSISTORS [J].
ABOWITZ, G ;
ARNOLD, E ;
LEVENTHA.EA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :775-+
[2]   THEORY OF CARRIER-DENSITY FLUCTUATIONS IN AN IGFET NEAR THRESHOLD [J].
BREWS, JR .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2181-2192
[3]   THE STATISTICS OF CHARGE CARRIER FLUCTUATIONS IN SEMICONDUCTORS [J].
BURGESS, RE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (10) :1020-1027
[4]  
Burstein E., 1969, TUNNELING PHENOMENA
[5]   STUDY OF 1/F NOISE IN N-MOSFETS - LINEAR REGION [J].
CELIK, Z ;
HSIANG, TY .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (12) :2797-2802
[6]   SPECTRAL DEPENDENCE OF 1/F-GAMMA NOISE ON GATE BIAS IN N-MOSFETS [J].
CELIKBUTLER, Z ;
HSIANG, TY .
SOLID-STATE ELECTRONICS, 1987, 30 (04) :419-423
[7]   LOW FREQUENCY NOISE IN MOS TRANSISTORS .I. THEORY [J].
CHRISTEN.S ;
LUNDSTRO.I ;
SVENSSON, C .
SOLID-STATE ELECTRONICS, 1968, 11 (09) :797-&
[8]   THEORY AND EXPERIMENTS ON SURFACE 1/F NOISE [J].
FU, HS ;
SAH, CT .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :273-+
[10]   LATTICE SCATTERING CAUSES 1-F NOISE [J].
HOOGE, FN ;
VANDAMME, LKJ .
PHYSICS LETTERS A, 1978, 66 (04) :315-316