DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN FE

被引:165
作者
MYERS, SM [1 ]
PICRAUX, ST [1 ]
STOLTZ, RE [1 ]
机构
[1] SANDIA LABS,LIVERMORE,CA 94550
关键词
D O I
10.1063/1.326761
中图分类号
O59 [应用物理学];
学科分类号
摘要
The trapping of ion-implanted deuterium (D) by lattice damage in Fe was investigated in the temperature range 90-500 K. The D depth profile was determined by measuring the proton yield from the 3He-excited nuclear reaction D(3He,p)4He, and the D lattice location was obtained by ion channeling. Linear ramping of the temperature produced a sharp detrapping stage at 260 K and a broader release extending over 350-450 K. The release-vs-temperature data were analyzed by solving the diffusion equation with appropriate trapping terms, yielding 0.48 and ?0.81 eV for the binding enthalpies associated with the two stages. The 0.48-eV trap corresponds to D at a near-octahedral interstitial site, where it is believed to be associated with a vacancy.
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收藏
页码:5710 / 5719
页数:10
相关论文
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