ND3+ INCORPORATION IN CAF2 LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

BAUSA, LE

LEGROS, R

MUNOZYAGUE, A

机构：

[1] Laboratoire d'Automatique et d'Analyse des Systèmes, CNRS 7, 31077 Toulouse Cedex, Avenue du Colonel Roche

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.106003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy of Nd3+ -doped CaF2 monocrystalline layers on CaF2 substrates is demonstrated. Nd concentration is controlled by the temperature of an evaporation cell containing NdF3. Photoluminescence spectra of the samples show emissions from Nd3+ centers in tetragonal symmetry sites as a consequence of the charge compensation mechanism provided by interstitial F- ions.

引用

页码：152 / 154

页数：3

共 11 条

[1] AN EPITAXIAL SI/INSULATOR/SI STRUCTURE PREPARED BY VACUUM DEPOSITION OF CAF2 AND SILICON [J].