PHONON-SIDEBAND MO-CVD QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER

被引:66
作者
HOLONYAK, N
KOLBAS, RM
LAIDIG, WD
ALTARELLI, M
DUPUIS, RD
DAPKUS, PD
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801
[3] ROCKWELL INT,CTR ELECTR RES,DIV ELECTR DEVICES,ANAHEIM,CA 92803
关键词
D O I
10.1063/1.90843
中图分类号
O59 [应用物理学];
学科分类号
摘要
Laser operation (4.2-300°K) of multiple-quantum-well Al xGa1-xAs-GaAs heterostructures on a phonon (LO) sideband ∼36 meV below the lowest confined-particle transitions is described. Phonon-sideband laser data are presented on two different metalorganic chemical-vapor-deposited (MO-CVD) quantum-well heterostructures with four GaAs active regions (Lz∼50 and ∼90 Å) coupled by three AlxGa1-xAs (x∼0.35) barriers.
引用
收藏
页码:502 / 505
页数:4
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