EXCITON REFLECTANCE AND PHOTOREFLECTANCE IN GAAS

被引：22

作者：

SHAY, JL

NAHORY, RE

机构：

[1] Bell Telephone Laboratories, Holmdel, NJ

来源：

SOLID STATE COMMUNICATIONS | 1969年 / 7卷 / 13期

关键词：

D O I：

10.1016/0038-1098(69)90548-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

An intense exciton structure has been observed in the reflectance and photoreflectance spectra of GaAs at 2°K. The photoreflectance is at least 200 times more intense than the previously reported spectrum at 77°K. The photoreflectance lineshape varies with laser intensity, and it is shown that this structure is at least partially due to a bound exciton. © 1969.

引用

页码：945 / &

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