EXCITON REFLECTANCE AND PHOTOREFLECTANCE IN GAAS

被引:22
作者
SHAY, JL
NAHORY, RE
机构
[1] Bell Telephone Laboratories, Holmdel, NJ
关键词
D O I
10.1016/0038-1098(69)90548-1
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
An intense exciton structure has been observed in the reflectance and photoreflectance spectra of GaAs at 2°K. The photoreflectance is at least 200 times more intense than the previously reported spectrum at 77°K. The photoreflectance lineshape varies with laser intensity, and it is shown that this structure is at least partially due to a bound exciton. © 1969.
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页码:945 / &
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