SUBMICROMETER PHOTOLITHOGRAPHY BY SURFACE IMAGING - EXPERIMENT AND SIMULATION

被引：2

作者：

BAUCH, L

JAGDHOLD, U

BAUER, J

DIETRICH, B

HOPPNER, W

ERZGRABER, H

DREGER, H

HELLER, G

RICHTER, K

ROLL, E

MEHLISS, G

ABRAHAM, W

机构：

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90054-H

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results obtained by investigation of the silylation and dry development process [1] in photolithography are presented. An improved depth resolution of 0.65-mu-m structures was obtained (exposure wavelength 436 nm, aperture 0, 3). A new way of process simulation will be outlined for evaluation of the silicon distribution and time dependence of the silylation.

引用

页码：89 / 92

页数：4