SCHOTTKY-COLLECTOR VERTICAL PNM BIPOLAR-TRANSISTOR

被引：8

作者：

AKBAR, S

RATANAPHANYARAT, S

KUANG, JB

CHU, SF

HSIEH, CM

机构：

[1] IBM General Technology Division, NY 12533, Hopewell Junction

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 01期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; BIPOLAR DEVICES; TRANSISTORS;

D O I：

10.1049/el:19920053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A submicrometre inverted vertical PNM bipolar transistor with a platinum-silicide (PtSi) silicon Schottky collector-base diode and a p+n emitter-base diode is demonstrated. The transistor presents normal bipolar device characteristics with a DC current gain as high as 40. Faster switches can be made by using PNM transistors. They offer a desirable performance leverage when implemented in VLSI logic circuits.

引用

页码：86 / 87

页数：2