THE BEHAVIOR OF K ON THE BASAL-PLANE OF MOS2

被引：10

作者：

PAPAGEORGOPOULOS, CA

KAMARATOS, M

KENNOU, S

VLACHOS, D

机构：

[1] Department of Physics, University of Ioannina, loannina, P.O. Box 1186

来源：

SURFACE SCIENCE | 1991年 / 251卷

关键词：

D O I：

10.1016/0039-6028(91)91150-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption of K on MoS2(0001) has been investigated by LEED, AES, TDS and WF measurements. The results suggest that the initial sticking coefficient of K on MoS2 is less than 1 (approximately 0.7). From the known flux and sticking coefficient, the K coverage could be determined at any time. At low coverage, K forms strongly ionized isolated adatoms as on metals and other semiconductors. However, with increasing coverage, K atoms form 2D clusters which with more K adsorption coalesce and grow to 3D clusters. The growth of K to 3D clusters contrasts the uniform deposition exhibited on metals and other semiconductors.

引用

页码：1057 / 1061

页数：5

共 15 条

[1] MODELS OF THE WORK FUNCTION CHANGES UPON ADSORBATE CLUSTERING - APPLICATION TO EXPERIMENTAL-DATA [J].