LOW-ENERGY LIMIT OF THE 3-BAND MODEL FOR ELECTRONS IN A CUO2 PLANE

被引:9
作者
BELINICHER, VI
CHERNYSHEV, AL
机构
[1] Institute of Semiconductor Physics
来源
PHYSICA C | 1993年 / 213卷 / 3-4期
关键词
D O I
10.1016/0921-4534(93)90446-W
中图分类号
O59 [应用物理学];
学科分类号
摘要
The three-band model with the O-O direct hopping near to unit filling is considered. We present the general procedure of reduction of this model to the low-energy limit. At unit filling the three-band model in the charge-transfer limit is reduced to the Heisenberg model and we calculate the superexchange constant. For the case of small electron doping the three-band model is reduced to the t-J model and we calculate electron hopping parameters at the nearest and next neighbors. We derive the structure of corrections to the t-J model and calculate their magnitudes. The values of the hopping parameters for electron-and hole-doping differ by approximately 40%.
引用
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页码:298 / 304
页数:7
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