DIFFUSION PHENOMENA IN SB-IMPLANTED SILICON

被引：4

作者：

ANTONCIK, E

机构：

[1] Institute of Physics, Aarhus University

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 125卷 / 04期

关键词：

ANTIMONY; SILICON; DIFFUSION; IMPLANTATION; THERMAL ANNEALING;

D O I：

10.1080/10420159308220212

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Rapid thermal annealing of antimony impurities implanted in silicon is interpreted in terms of reaction-diffusion processes. A simple model is proposed describing diffusion of Sb implants with peak concentrations both below and above the solubility limit. It turns out that the inclusion of the solubility limit has a profound influence on the character of the calculated profiles, in good agreement with experiment.

引用

页码：355 / 363

页数：9

共 17 条

[1]

Antoncik E., 1986, Radiation Effects, V88, P217, DOI 10.1080/00337578608207481

[2] ON THE LATTICE LOCATION OF IMPLANTED IMPURITIES IN SILICON [J].

ANTONCIK, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 14 (02) :193-203

[3] ON THE THEORY OF TRANSIENT ENHANCED DIFFUSION IN BORON-IMPLANTED SILICON [J].

ANTONCIK, E .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 116 (04) :375-387

[4] ANOMALOUS TRANSIENT TAIL DIFFUSION IN BORON-IMPLANTED SILICON [J].

ANTONCIK, E .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 118 (04) :371-381

[5]

ANTONCIK E, 1990, 1989 P INT C SCI TEC, P471

[6]

ANTONCIK E, UNPUB

[7]

ANTONCIK E, IN PRESS

[8] ANNEALING OF ANTIMONY IMPLANTED SILICON WITH HALOGEN LAMP IRRADIATION [J].

BORISENKO, VE ;

LABUNOV, VA .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :K173-K176

[9] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE AND ELECTRON-NUCLEAR DOUBLE RESONANCE OF ARSENIC- AND ANTIMONY-VACANCY PAIRS [J].

ELKIN, EL ;

WATKINS, GD .

PHYSICAL REVIEW, 1968, 174 (03) :881-&

[10]

KUCHER TI, 1964, SOV PHYS-SOL STATE, V6, P623

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