RABI FLOPPING IN SEMICONDUCTORS

被引：143

作者：

CUNDIFF, ST

KNORR, A

FELDMANN, J

KOCH, SW

GOBEL, EO

NICKEL, H

机构：

[1] DEUTSCH BUNDESPOST TELEKOM,FERNMELDETECH ZENT AMT,D-64295 DARMSTADT,GERMANY

[2] UNIV MARBURG,WISSENSCHAFTLICHES ZENTRUM MAT WISSENSCH,D-35032 MARBURG,GERMANY

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 73卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.73.1178

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By examining the interaction of two copropagating ultrafast optical pulses in a semiconductor multiple quantum well, we experimentally determine the temporal dependence of the induced polarization. Based on this technique we observe that the optically induced density goes through a maximum at sufficiently high excitation intensity. Microscopic calculations show that the observed phenomena are a manifestation of Rabi flopping in semiconductors.

引用

页码：1178 / 1181

页数：4

共 20 条

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