CONTACT RESISTANCE DEPENDENCE ON INGAASP LAYERS LATTICE-MATCHED TO INP

[1] CHANG CY, 1971, SOLID STATE ELECTRON, V14, P151

[2] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[3] SCHOTTKY-BARRIER HEIGHT OF AU-PARA-INGAASP ALLOYS LATTICE-MATCHED TO INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 874 - 875

[4] 1.3 MU-M CW OPERATION OF GAINASP/INP DH DIODE-LASERS AT ROOM-TEMPERATURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1273 - 1274

[1] CHANG CY, 1971, SOLID STATE ELECTRON, V14, P151

[2] OHMIC CONTACTS FOR GAAS DEVICES [J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +

[3] SCHOTTKY-BARRIER HEIGHT OF AU-PARA-INGAASP ALLOYS LATTICE-MATCHED TO INP [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 874 - 875

[4] 1.3 MU-M CW OPERATION OF GAINASP/INP DH DIODE-LASERS AT ROOM-TEMPERATURE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (07) : 1273 - 1274