COULOMB BLOCKADE OF TUNNELING IN A 2D-ELECTRON GAS

被引：7

作者：

PASQUIER, C ^{[1
]}

GLATTLI, DC ^{[1
]}

MEIRAV, U ^{[1
]}

WILLIAMS, FIB ^{[1
]}

JIN, Y ^{[1
]}

ETIENNE, B ^{[1
]}

机构：

[1] CNRS,MICROSTRUCT & MICROELECTR LAB,F-94220 BAGNEUX,FRANCE

来源：

SURFACE SCIENCE | 1992年 / 263卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(92)90380-O

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The 2D electron gas of a GaAs/GaAlAs heterojunction is confined to a small island by means of Schottky gates. Two gates provide adjustable tunnel barriers and a central gate controls the electron number of the island. Conductance oscillations, periodic with the electron number, are observed in the Coulomb blockade regime with negligible energy level spacing. At low temperature, the blockade of the conductance by the island is shown to be limited by the quantum process of co-tunneling.

引用

页码：419 / 423

页数：5

共 18 条

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