THEORY AND EXPERIMENTS ON SHOT NOISE IN SILICON P-N JUNCTION DIODES AND TRANSISTORS

被引：40

作者：

SCHNEIDER, B

STRUTT, MJO

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS | 1959年 / 47卷 / 04期

关键词：

D O I：

10.1109/JRPROC.1959.287337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：546 / 554

页数：9

共 12 条

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[5] THE EVOLUTION OF THE THEORY FOR THE VOLTAGE-CURRENT CHARACTERISTIC OF P-N JUNCTIONS [J].

MOLL, JL .

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[6]

NONNENMACHER W, 1957, NACHRTECH Z, V11, P559

[7] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS [J].

SAH, CT ;

NOYCE, RN ;

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09) :1228-1243

[8]

SCHNEIDER B, 1957, SEP NACHR TECHN GES

[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[10]

VANDERZIEL A, 1955, P IRE, V43, P1639

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