OPTICAL-PROPERTIES OF QUASI-CRYSTALLINE APPROXIMANT BORON-RICH SOLIDS

被引:3
作者
HORI, A [1 ]
KIMURA, K [1 ]
TADA, T [1 ]
YAMASHITA, H [1 ]
机构
[1] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN
关键词
D O I
10.1016/0022-3093(93)90363-3
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The photoluminescence (PL) spectrum of a single crystal of beta-rhombohedral boron, which is a rhombohedral crystalline approximant of the icosahedral quasicrystal, has a peak around 1.14 eV. This is assumed to correspond to recombination between a hole in the intrinsic acceptor level originated from B-12 icosahedral cluster, and an electron in the highest trapping level. Thermal quenching of the PL intensity is analyzed by two activation processes, whose activation energies are 0.12 and 0.004 eV. The former is considered to be an escape process of an electron from the trapping level.
引用
收藏
页码:308 / 311
页数:4
相关论文
共 7 条