DETERMINATION OF GAMMA-ELECTRON AND LIGHT HOLE EFFECTIVE MASSES IN ALXGA1-XAS ON THE BASIS OF ENERGY GAPS, BAND-GAP OFFSETS, AND ENERGY-LEVELS IN ALXGA1-XAS/GAAS QUANTUM-WELLS

被引：22

作者：

HRIVNAK, L

机构：

[1] Institute of Electrical Engineering, Electro-Physical Research Center, Slovak Academy of Sciences

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 24期

关键词：

D O I：

10.1063/1.102898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Experimental data of energy gaps, band offsets, and energy levels in AlxGa1-xAs/GaAs quantum wells are utilized for the determination of Γ electron and light hole effective masses in Al xGa1-xAs compounds on the basis of the author's relations between these quantities. The temperature dependences of electron and light hole effective masses in GaAs are also obtained.

引用

页码：2425 / 2427

页数：3

共 19 条

[1] DETERMINATION OF THE VALENCE-BAND DISCONTINUITY BETWEEN GAAS AND (AL,GA)AS BY THE USE OF P+-GAAS-(AL,GA)AS-P--GAAS CAPACITORS [J].