INTRINSIC SURFACE STATES IN SEMICONDUCTORS

被引：70

作者：

JONES, RO

机构：

[1] Cavendish Laboratory, Cambridge

[2] Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY

来源：

关键词：

D O I：

10.1103/PhysRevLett.20.992

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：992 / &

共 15 条

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