DIGITAL DEEP LEVEL TRANSIENT SPECTROSCOPY CONSIDERED FOR DISCRIMINATION OF TRAPS CLOSELY SPACED IN EMISSION COEFFICIENTS IN SEMICONDUCTORS

被引：13

作者：

KIM, HK

SCHLESINGER, TE

MILNES, AG

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 02期

关键词：

D O I：

10.1007/BF02652150

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：187 / 191

页数：5

共 6 条

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[4] METHOD OF ANALYSIS OF A SINGLE-PEAK DLTS SPECTRUM WITH 2 OVERLAPPING DEEP-TRAP RESPONSES [J].

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[5]

Ransom C.M., 1986, MATER RES STAND, V69, P337, DOI [10.1557/PROC-69-337, DOI 10.1557/PROC-69-337]

[6] CAPACITANCE TRANSIENT ANALYSIS OF MOLECULAR-BEAM EPITAXIAL ETA-IN0.53GA0.47AS AND ETA-IN0.52AL0.48AS [J].

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