Characteristics of dielectric behavior in nanostructured materials

被引：103

作者：

Mo, CM ^{[1
]}

Zhang, LD ^{[1
]}

Wang, GZ ^{[1
]}

机构：

[1] ACAD SINICA,INST SOLID STATE PHYS,HEFEI 230031,PEOPLES R CHINA

来源：

NANOSTRUCTURED MATERIALS | 1995年 / 6卷 / 5-8期

关键词：

D O I：

10.1016/0965-9773(95)00186-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric behaviour of nanostructured TiO2, alpha - Al2O3, Si and amorphous silicon nitride was investigated. The mechanisms of the high dielectric constant, epsilon', and the size effect of epsilon' were discussed.

引用

页码：823 / 826

页数：4

共 6 条

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[2]

Mo C., 1993, Nanostructured Materials, V2, P47, DOI 10.1016/0965-9773(93)90049-H

[3]

TAREEV B, 1979, PHYS DIELECTRIC MAT, P51

[4] ANOMALOUS DIELECTRIC BEHAVIOR IN NANOMETER-SIZED AMORPHOUS-SILICON NITRIDE [J].

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[5] STRUCTURE AND BOND PROPERTIES OF COMPACTED AND HEAT-TREATED SILICON-NITRIDE PARTICLES [J].

ZHANG, L ;

MO, C ;

WANG, T ;

CAI, SH ;

XIE, CY .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 136 (02) :291-300

[6]

ZHANG LD, UNPUB J PHYS B

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