ELECTROLESS DEPOSITION OF EPITAXIAL PB1-XHGXS FILMS

Epitaxial films of Pb1-xHgxS (x = 0-0.33) were grown on single-crystal (111) Ge and (111) Si substrates by an electroless deposition process under conditions of controlled dilutions and reaction bath temperatures. Electron microscopy and electron diffraction studies show the predominance of [111] and [112] orientations in films grown on (111) Ge and (111) Si substrates respectively. The films grew initially as β′-Pb1-xHgxS up to a thickness of about 800 Å; beyond this thickness the films were α′-Pb1-xHgxS. © 1979.