LIFETIME OF INJECTED CARRIERS IN GERMANIUM

[1] DEPENDENCE OF RESISTIVITY OF GERMANIUM ON ELECTRIC FIELD [J]. PHYSICAL REVIEW, 1949, 76 (01): : 152 - 153

[2] BRAY R, 1949, PHYS REV, V76, P458

[3] FAN HY, 1949, PURDUE SEMICONDUCTOR, P6

[4] THEORY AND EXPERIMENT FOR A GERMANIUM P-N JUNCTION [J]. PHYSICAL REVIEW, 1951, 81 (04): : 637 - 638

[5] MEASUREMENT OF HOLE DIFFUSION IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1951, 81 (03): : 475 - 475

[6] SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P60

[7] TAYLOR WE, 1949, PURDUE SEMICONDUCTOR

[1] DEPENDENCE OF RESISTIVITY OF GERMANIUM ON ELECTRIC FIELD [J]. PHYSICAL REVIEW, 1949, 76 (01): : 152 - 153

[2] BRAY R, 1949, PHYS REV, V76, P458

[3] FAN HY, 1949, PURDUE SEMICONDUCTOR, P6

[4] THEORY AND EXPERIMENT FOR A GERMANIUM P-N JUNCTION [J]. PHYSICAL REVIEW, 1951, 81 (04): : 637 - 638

[5] MEASUREMENT OF HOLE DIFFUSION IN N-TYPE GERMANIUM [J]. PHYSICAL REVIEW, 1951, 81 (03): : 475 - 475

[6] SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P60

[7] TAYLOR WE, 1949, PURDUE SEMICONDUCTOR