HIGH-SPEED AND LOW-RELATIVE-INTENSITY NOISE 1.3 MU-M INGAASP SEMIINSULATING BURIED CRESCENT LASERS

被引:8
作者
CHENG, WH
BUEHRING, KD
APPELBAUM, A
RENNER, D
SHIN, S
SU, CB
MAR, A
BOWERS, JE
机构
[1] TEXAS A&M UNIV SYST,DEPT ELECT ENGN,COLLEGE STN,TX 77843
[2] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106
关键词
D O I
10.1109/3.89988
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The dependence of static and dynamic performance on active layer doping concentration in 1.3-mu-m InGaAsP semi-insulting buried crescent (SIBC) Fabry-Perot lasers has been investigated experimentally. The optical loss in the active region is one of the dominant mechanisms in determining the threshold current for doped active layer lasers. These SIBC lasers have a 3 dB modulation bandwidth of 19 GHz for pulsed operation and 16 GHz for CW operation, and have a relative intensity noise below - 150 dB/Hz for biased current at 120 mA. This modulation bandwidth is the highest yet reported for InGaAsP lasers with semi-insulating current-blocking layers. The doped active lasers show an initial small degradation rate at 65-degrees-C operation, which gives an acceptably long operation lifetime.
引用
收藏
页码:1642 / 1647
页数:6
相关论文
共 14 条
[1]  
AGRAWAL GP, 1986, LONG WAVELENGTH SEMI, pCH5
[2]   HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE [J].
BOWERS, JE .
SOLID-STATE ELECTRONICS, 1987, 30 (01) :1-11
[3]   EFFECT OF ACTIVE LAYER THICKNESS ON DIFFERENTIAL QUANTUM EFFICIENCY OF 1.3 AND 1.55 MU-M INGAASP INJECTION-LASERS [J].
CHENG, WH ;
SU, CB ;
RENNER, D .
APPLIED PHYSICS LETTERS, 1987, 51 (01) :3-5
[4]   WIDEBAND MODULATION OF 1.3 MU-M INGAASP BURIED CRESCENT LASERS WITH IRON-DOPED AND COBALT-DOPED SERMI-INSULATING CURRENT BLOCKING LAYERS [J].
CHENG, WH ;
HUANG, SY ;
APPELBAUM, A ;
POOLADDEJ, J ;
BUEHRING, KD ;
WOLF, D ;
RENNER, DS ;
HESS, KL ;
ZEHR, SW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1989, 25 (06) :1353-1361
[5]   LOW THRESHOLD 1.51-MU-M INGAASP BURINED CRESCENT INJECTION-LASERS WITH SEMIINSULATING CURRENT CONFINEMENT LAYER [J].
CHENG, WH ;
SU, CB ;
BUEHRING, KD ;
CHIEN, CP ;
URE, JW ;
PERRACHIONE, D ;
RENNER, D ;
HESS, KL ;
ZEHR, SW .
APPLIED PHYSICS LETTERS, 1986, 49 (21) :1415-1417
[6]  
EON J, 1990, APPL PHYS LETT, V56, P518
[7]   LASER AND LED RELIABILITY UPDATE [J].
FUKUDA, M .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1988, 6 (10) :1488-1495
[8]  
HUANG SY, 1988, P SPIE, V995, P2
[9]  
ISHIKAWA H, 1982, IEEE J QUANTUM ELECT, V18, P1704, DOI 10.1109/TMTT.1982.1131310
[10]   GROWTH AND CHARACTERIZATION OF 1.3 MU-M CW GAINASP-INP LASERS BY LIQUID-PHASE EPITAXY [J].
NG, WW ;
DAPKUS, PD .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :193-198