OXIL, A VERSATILE BIPOLAR VLSI TECHNOLOGY

被引：12

作者：

AGRAZGUERENA, J

PANOUSIS, PT

MORRIS, BL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 08期

关键词：

D O I：

10.1109/T-ED.1980.20047

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1397 / 1401

页数：5

共 11 条

[1]

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BERGER, HH ;

WIEDMANN, SK .

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IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) :346-&

[7] SCHOTTKY I2L [J].

HEWLETT, FW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, 10 (05) :343-348

[8] HIGH-SPEED INTEGRATED INJECTION LOGIC (I2L) [J].

MULDER, C ;

WULMS, HEJ .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (03) :379-385

[9] FULLY ION-IMPLANTED BIPOLAR-TRANSISTORS [J].

PAYNE, RS ;

SCAVUZZO, RJ ;

OLSON, KH ;

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[10] NEW HIGH-SPEED 12L STRUCTURE [J].

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