POSTGROWTH TAILORING OF THE OPTICAL-PROPERTIES OF GAAS ALGAAS QUANTUM-WELL STRUCTURES

被引：13

作者：

GHISONI, M

STEVENS, PJ

PARRY, G

ROBERTS, JS

机构：

[1] UNIV LONDON UNIV COLL,DEPT ELECTR & ELECT ENGN,LONDON WC1E 7JE,ENGLAND

[2] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1991年 / 23卷 / 07期

关键词：

D O I：

10.1007/BF00624981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we describe a method for performing post-growth bandgap engineering in the GaAs/AlGaAs quantum well system. The method used is impurity-free vacancy diffusion. Using both single and multiple quantum well data we show that this allows blue shifts in the optical properties, while retaining both their distinctive excitonic and electrical characteristics. The electrical response is modelled and no comparative degradation of the quantum confined Stark effect is predicted, and this is confirmed experimentally. Possible applications of this technique are mentioned.

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收藏

页码：S915 / S924

页数：10

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