RECOMBINATION PROPERTIES OF GOLD IN SILICON

被引：164

作者：

BEMSKI, G

机构：

来源：

PHYSICAL REVIEW | 1958年 / 111卷 / 06期

关键词：

D O I：

10.1103/PhysRev.111.1515

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1515 / 1518

页数：4

共 13 条

[1] PROPERTIES OF GOLD-DOPED SILICON
COLLINS, CB
CARLSON, RO
GALLAGHER, CJ
[J]. PHYSICAL REVIEW, 1957, 105 (04): : 1168 - 1173
[2] DAVIS WD, COMMUNICATION
[3] AMPHOTERIC IMPURITY ACTION IN GERMANIUM
DUNLAP, WC
[J]. PHYSICAL REVIEW, 1955, 100 (06): : 1629 - 1633
[4] GOLD AS AN ACCEPTOR IN GERMANIUM
DUNLAP, WC
[J]. PHYSICAL REVIEW, 1955, 97 (03): : 614 - 629
[5] ELECTRON-HOLE RECOMBINATION IN GERMANIUM
HALL, RN
[J]. PHYSICAL REVIEW, 1952, 87 (02): : 387 - 387
[6] SWITCHING TIME IN JUNCTION DIODES AND JUNCTION TRANSISTORS
KINGSTON, RH
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (05): : 829 - 834
[7] LAX M, 1956, 2ND S SEM WASH
[8] CARRIER LIFETIME IN SEMICONDUCTORS FOR TRANSIENT CONDITIONS
SANDIFORD, DJ
[J]. PHYSICAL REVIEW, 1957, 105 (02): : 524 - 524
[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[10] GOLD AS A DONOR IN SILICON
TAFT, EA
HORN, FH
[J]. PHYSICAL REVIEW, 1954, 93 (01): : 64 - 64