STRUCTURAL-ANALYSIS OF THERMALLY OXIDIZED AMORPHOUS SI1-XGEX LAYERS

被引：2

作者：

BENRAKKAD, MS

FERRER, JC

GARRIDO, B

PEDROVIEJO, JJ

CALDERER, J

MORANTE, JR

机构：

[1] L.E.M.E., Departament de Física Aplicada i Electrònica, Universitat de Barcelona, E-08028 Barcelona

[2] Departament d'Enginyeria Electrònica, Universitat Politécnica de Catalunya, E-08071 Barcelona

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00049-E

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The study of the oxidation process of amorphous SiGe alloys is reported from the microstructural characteristics of the obtained oxides by wet oxidation at 700 degrees C during 30 minutes. The analysis has been carried out by TEM, Raman, FTIR and XPS measurements which reveal that the whole layers are partially oxidized, (Si,Ge)O-y, without Ge pile-up. The deduced suboxides concentrations show the preferential silicon oxidation in spite of the simultaneous oxidation of Si and Ge. Likewise, a comparison with the oxidation of the polycrystalline alloys is performed to stand out the role of the Si and Ge diffusivities,

引用

页码：225 / 228

页数：4