MICROSTRUCTURES AND DIELECTRIC-PROPERTIES OF PURE AND DOPED KNBO3 CERAMICS

被引：16

作者：

DING, SP ^{[1
]}

SHEN, J ^{[1
]}

机构：

[1] SHANGHAI UNIV SCI & TECHNOL,DEPT MAT SCI,SHANGHAI,PEOPLES R CHINA

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1990年 / 73卷 / 05期

关键词：

dielectric materials; electrical properties; microstructure; niobates; potassium;

D O I：

10.1111/j.1151-2916.1990.tb05225.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Regions consisting of grains of pronounced cubic develpment exist in pure KNbO3 ceramics which exhibit a temperature dependence of dielectric constant very similar to that of KNbO3 crystals. KNbO3 ceramics doped with GeO2‐K2O additives have small grains, semiconducting resistance, and a different curve of dielectric constant versus temperature. As the average grain size decreases, the shape of the curve differs increasingly from that of KNbO3 crystals. Copyright © 1990, Wiley Blackwell. All rights reserved

引用

页码：1449 / 1450

页数：2

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