PREPARATION AND CHARACTERIZATION OF BI2TI2O7 THIN-FILMS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Smooth thin films of Bi2Ti2O7 have been prepared on silicon and fused quartz substrates by metalorganic chemical vapor deposition (MOCVD) at atmosphere pressure for the first time. X-ray diffraction analysis (XRD) showed that films deposited on silicon substrate are single-phase randomly oriented Bi2Ti2O7, and on SiO2 substrates, a (111) orientation was obtained. The films are transparent in the visible and near infrared and exhibit a sharp absorption edge at 310 nm in the ultraviolet. Measurement of electrical properties gives a dielectric constant (epsilon) of 64, and a loss tangent (tan delta) of 0.01 at room temperature.