AN ADVANCED ELECTRON-BEAM LITHOGRAPHY SYSTEM FOR SUB-HALF-MICRON ULTRA-LARGE-SCALE PRODUCTION - THE DISTORTION CORRECTOR TECHNOLOGY

被引：6

作者：

NAKAMURA, K ^{[1
]}

OKINO, T ^{[1
]}

NAKANODA, S ^{[1
]}

KAWAMURA, I ^{[1
]}

GOTO, N ^{[1
]}

NAKAGAWA, Y ^{[1
]}

THOMPSON, W ^{[1
]}

SHEARER, MH ^{[1
]}

机构：

[1] JEOL USA,PEABODY,MA 01960

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 06期

关键词：

D O I：

10.1116/1.585182

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The manufacture of the critical layers of production of ultra-large-scale integration (ULSI) devices requires resolution beyond the capability of today's photolithography equipment. JEOL has developed a high precision electron beam lithography system, the JBX-8600DV, which satisfies the demands of these new device designs. The 8600DV employs advanced calibration algorithms to ensure accurate feature placement and linewidth control. This paper discusses a real time distortion and aberration correction system which compensates for stepper lens distortions, wafer warpage, and deflector anomalies. The system incorporates novel dynamic focus, astigmatism, and distortion corrector technologies to reduce distortion and aberration. The corrector system utilizes a two-dimensional spline fitting technique to produce the proper correction coefficients. This technology reduces linewidth dimensional errors to 0.03-mu-m(3-sigma) within a 2 mm deflection field and main field placement errors to < 0.04-mu-m.

引用

页码：1903 / 1908

页数：6