HUBBARD-MODEL FOR DISORDERED-SYSTEMS - APPLICATION TO THE SPECIFIC-HEAT OF THE PHOSPHORUS-DOPED SILICON

被引：26

作者：

DASILVA, AF

KISHORE, R

LIMA, ICD

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 23卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.23.4035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4035 / 4043

页数：9

共 26 条

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[6]

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[7]

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[8] COMMENT ON HUBBARDS THEORY OF MOTT TRANSITION [J].

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[9]

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[10]

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