NEW STRUCTURE OF ENHANCEMENT-MODE GAAS MICROWAVE MOSFET

[1] FEM TO JOULE LOGIC-CIRCUIT USING NORMALLY-OFF GAAS MESFETS [J]. ELECTRONICS LETTERS, 1977, 13 (21) : 644 - 645

[2] HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P147

[3] ISHIKAWA H, 1977, ISSCC DIG TECH, V20, P200

[4] LOW-FREQUENCY CURRENT PULSES IN A SEMIINSULATING GAAS DEVICE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 679 - 681

[5] MIMURA T, 1977, P C SOLID STATE DEVI

[6] MIMURA T, 1978, JAPAN J APPL PHY S17, P153

[7] NORMALLY-OFF AL0.5GA0.5AS HETERO-JUNCTION-GATE GAAS FET [J]. ELECTRONICS LETTERS, 1977, 13 (24) : 747 - 748

[8] YOKOHAMA N, 1977, I PHYS C SER B, V33, P201

[1] FEM TO JOULE LOGIC-CIRCUIT USING NORMALLY-OFF GAAS MESFETS [J]. ELECTRONICS LETTERS, 1977, 13 (21) : 644 - 645

[2] HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P147

[3] ISHIKAWA H, 1977, ISSCC DIG TECH, V20, P200

[4] LOW-FREQUENCY CURRENT PULSES IN A SEMIINSULATING GAAS DEVICE [J]. APPLIED PHYSICS LETTERS, 1976, 29 (10) : 679 - 681

[5] MIMURA T, 1977, P C SOLID STATE DEVI

[6] MIMURA T, 1978, JAPAN J APPL PHY S17, P153

[7] NORMALLY-OFF AL0.5GA0.5AS HETERO-JUNCTION-GATE GAAS FET [J]. ELECTRONICS LETTERS, 1977, 13 (24) : 747 - 748

[8] YOKOHAMA N, 1977, I PHYS C SER B, V33, P201