THEORY OF THE HALL-EFFECT IN FINITE SYSTEMS CONTAINING TRAPS

被引:2
作者
MANIFACIER, JC [1 ]
HENISCH, HK [1 ]
机构
[1] UNIV PENN,DEPT PHYS,PHILADELPHIA,PA 19174
关键词
D O I
10.1016/0022-3093(80)90582-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:117 / 121
页数:5
相关论文
共 14 条
  • [1] BANBURY PC, 1953, P PHYS SOC, V46, P753
  • [2] CARVER GP, 1972, J NONCRYST SOLIDS, V8, P347
  • [3] DAVIS EA, 1975, 6TH P INT C AM LIQ S, P212
  • [4] FOWLER RH, 1936, STATISTICAL MECHANIC
  • [5] Friedman L., 1971, J NONCRYST SOLIDS, V6, P329
  • [6] DIFFUSION CURRENTS IN THE SEMICONDUCTOR HALL EFFECT
    LANDAUER, R
    SWANSON, J
    [J]. PHYSICAL REVIEW, 1953, 91 (03): : 555 - 560
  • [7] MINORITY-CARRIER INJECTION INTO SEMICONDUCTORS
    MANIFACIER, JC
    HENISCH, HK
    [J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2640 - 2647
  • [8] HALL-EFFECT IN FINITE SPECIMENS OF ARBITRARY LIFETIME AND TRAP CONTENT
    MANIFACIER, JC
    [J]. PHYSICAL REVIEW B, 1978, 17 (10): : 3926 - 3935
  • [9] Seager C. H., 1972, J NONCRYST SOLIDS, V810, P341
  • [10] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
    SHOCKLEY, W
    READ, WT
    [J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842