X-RAY PHOTOELECTRON-SPECTROSCOPY OF CUINSE2

被引：24

作者：

KOHIKI, S

NISHITANI, M

NEGAMI, T

WADA, T

机构：

[1] Central Research Laboratories, Matsushita Electric Industrial Co. Ltd., Moriguchi

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.45.9163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In x-ray photoemission, we have observed negative shifts of the valence-band maximum with conduction-type conversion from p to n type, induced by a decrease in the [Cu]/[In] ratio of the Cu1 +/- delta-In1 -/+ delta-Se2 thin films, deposited by a molecular-beam method. We found no evidence of Cu 2p poorly screened peaks, representing Cu d9 electron configuration in the p-type films. Holes in the p-type films are located at the d-p antibonding orbital, dominated by the Se p state in the crystal. The binding energy of the Cu d state, dominating the d-p bonding orbital, is larger than that of the Se p state.

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页码：9163 / 9168

页数：6

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