MAGNETORESISTANCE OF BA1-XKXBIO3 POLYCRYSTALLINE THIN-FILMS

被引：3

作者：

ENOMOTO, Y

TANABE, K

YAMAJI, A

机构：

[1] NTT Applied Electronics Labs. Tokai-Mura, Ibaraki-Ken

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 1991年 / 185卷

关键词：

D O I：

10.1016/0921-4534(91)91882-5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed exponential increases in the temperature dependence of resistivity for Ba1-XKXBiO3 polycrystalline thin films under magnetic fields. These increases in resistivity are attributed to barriers at the grain boundaries. This temperature dependence well explains the behavior of I-V characteristics for Josephson junctions formed along the grain boundaries.

引用

页码：1317 / 1318

页数：2

共 3 条

[1] ELECTRICAL-PROPERTIES OF GRAIN-BOUNDARIES IN BA1-XKXBIO3 POLYCRYSTALLINE THIN-FILMS [J].

ENOMOTO, Y ;

MORIWAKI, K ;

TANABE, K .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5735-5740

[2] BA1-XKXBIO3 THIN-FILM PREPARATION BY ECR ION-BEAM OXIDATION, AND FILM PROPERTIES [J].

ENOMOTO, Y ;

MURAKAMI, T ;

MORIWAKI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08) :L1355-L1357

[3] OPTICAL STUDY OF THE METAL-INSULATOR TRANSITION ON BA1-XKXBIO3 THIN-FILMS [J].

SATO, H ;

TAJIMA, S ;

TAKAGI, H ;

UCHIDA, S .

NATURE, 1989, 338 (6212) :241-243

← 1 →