LOW-TEMPERATURE PHOTOCAPACITY MEASUREMENT IN MOS STRUCTURE

被引：20

作者：

KAMIENIECKI, E ^{[1
]}

机构：

[1] UNIV STUTTGART, INST HALBLEITER TECH, 7 STUTTGART, GERMANY

来源：

SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 12期

关键词：

D O I：

10.1016/0038-1101(73)90066-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1487 / 1493

页数：7

共 22 条

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[9] LOW-TEMPERATURE HYSTERESIS EFFECTS IN METAL-OXIDE-SILICON CAPACITORS CAUSED BY SURFACE-STATE TRAPPING [J].

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