LIMITATION ON DEEP TRAPPING OF INJECTED SPACE-CHARGE IN NAPHTHALENE AND CDS MONOCRYSTALS

被引：4

作者：

DRESNER, J

CAMPOS, M

MORENO, RA

机构：

[1] RCA LABS,PRINCETON,NJ 08540

[2] INST FIS & QUIM,13560 SAO CARLOS,BRAZIL

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 08期

关键词：

D O I：

10.1063/1.1662826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3708 / 3712

页数：5

共 28 条

[1] SPACE-CHARGE CURRENTS IN GALLIUM ARSENIDE [J].

ALLEN, JW ;

CHERRY, RJ .

NATURE, 1961, 189 (476) :297-&

[2] TRAP DENSITY DETERMINATION BY SPACE-CHARGE-LIMITED CURRENTS [J].

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) :1733-&

[3] SCHOTTKY BARRIER FORMATION IN NAPHTHALENE ELECTRETS [J].

CAMPOS, M ;

MASCARENHAS, S ;

FERREIRA, GL .

PHYSICAL REVIEW LETTERS, 1971, 27 (21) :1432-+

[4]

CAMPOS M, 1972, J MOL CRYSTALS LIQUI, V18, P105

[5] PHOTOCONDUCTIVITY AND IMPACT IONIZATION IN CDS [J].

CRANDALL, RS .

APPLIED PHYSICS LETTERS, 1967, 10 (11) :316-&

[6] PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON [J].

DENDA, S ;

NICOLET, MA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2412-&

[7] PRECIPITATION OF IMPURITIES IN LARGE SINGLE CRYSTALS OF CDS [J].

DREEBEN, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) :174-179

[8]

DRESNER J, 1969, RCA REV, V30, P322

[9] THEORY OF SPACE-CHARGE-LIMITED CURRENTS IN THIN SEMICONDUCTOR LAYERS [J].

GEURST, JA .

PHYSICA STATUS SOLIDI, 1966, 15 (01) :107-&

[10] EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES [J].

GREGORY, BL ;

JORDAN, AG .

PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1378-&

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