LIMITS OF RESOLUTION OF CHARGE SENSITIVE DETECTOR SYSTEMS

被引：17

作者：

KANDIAH, K

WHITING, FB

机构：

[1] Rutherford Appleton Laboratory, Chilton, Didcot, Oxon

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1993年 / 326卷 / 1-2期

关键词：

D O I：

10.1016/0168-9002(93)90332-C

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A summary of a model of LF noise in field effect transistors is presented. New measurements of noise in FETs made on high resistivity Si substrates give evidence of the problems in such structures. The performance of conventional detector structures is compared with direct charge sensing FETs. The prospects of reducing equivalent noise charge to 0.1 e- rms are discussed.

引用

页码：49 / 62

页数：14

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