RESIDUAL THERMOELASTIC STRESSES IN BONDED SILICON WAFERS

被引：22

作者：

RINEY, TD

机构：

来源：

关键词：

D O I：

10.1063/1.1736024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：454 / &

共 17 条

[1]

ADAMS OE, 1957, DISSERTATION

[2]

ALECK BJ, 1949, J APPL MECH, V71, P118

[3]

BOND WL, BTL

[4] INFRA-RED ABSORPTION IN SILICON [J].

BRIGGS, HB .

PHYSICAL REVIEW, 1950, 77 (05) :727-728

[5]

CADY WG, 1946, PIEZOELECTRICITY, P55

[6] PROPERTIES OF SILICON AND GERMANIUM [J].

CONWELL, EM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1327-1337

[7]

DASH WC, 1955, PHYS REV, V98, P1536

[8]

DURELLI AJ, 1955, J APPL MECH, V77, P191

[9]

DURELLI AJ, 1955, J APPL MECH, V77, P190

[10]

GIARDINI AA, 1958, AM MINERAL, V43, P249