A PHOTO-ELECTROCHEMICAL CELL BASED ON CHEMICALLY DEPOSITED SB2SE3 THIN-FILM ELECTRODE AND DEPENDENCE OF DEPOSITION ON VARIOUS PARAMETERS

被引：45

作者：

BHATTACHARYA, RN

PRAMANIK, P

机构：

来源：

SOLAR ENERGY MATERIALS | 1982年 / 6卷 / 03期

关键词：

D O I：

10.1016/0165-1633(82)90037-5

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：317 / 322

页数：6

共 20 条

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[8] SOME SEMICONDUCTING PROPERTIES OF BISMUTH TRISULFIDE
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[9] SCHOTTKY-BARRIER HEIGHT, PHOTO-VOLTAGE AND PHOTOCURRENT IN LIQUID-JUNCTION SOLAR-CELLS
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[J]. SOLAR ENERGY MATERIALS, 1979, 2 (01): : 131 - 142
[10] PERFORMANCE OF SYNTHETICAL N-MOSE2 IN ELECTROCHEMICAL SOLAR-CELLS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (12) : 2085 - 2086

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