SUBBAND STRUCTURE CALCULATION FOR INVERSION-LAYERS IN INAS AND INP

被引：7

作者：

UBENSEE, H

PAASCH, G

GOBSCH, G

机构：

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1016/0038-1098(87)90411-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：699 / 701

页数：3

共 13 条

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[3]

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[5]

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[7] SELF-CONSISTENT THEORY OF THE ELECTRONIC-STRUCTURE OF INVERSION-LAYERS .1. A NEW METHOD USING THE MODIFIED LOCAL DENSITY APPROXIMATION [J].

UBENSEE, H ;

PAASCH, G ;

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GOBSCH, G .

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[8]

UBENSEE H, 1986, PHYS STATUS SOLIDI B, V134, P376

[9] MAGNETOCONDUCTANCE STUDY OF INVERSION-LAYERS ON INAS METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

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APPLIED PHYSICS LETTERS, 1983, 43 (10) :965-967

[10] ELECTRON SUBBANDS AND TRANSPORT-PROPERTIES IN INVERSION-LAYERS OF INAS AND INP [J].

YAMAGUCHI, E .

PHYSICAL REVIEW B, 1985, 32 (08) :5280-5288

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