MAGNETIC MODES IN DEGENERATE SEMICONDUCTORS

被引:1
作者
COLE, HSD
机构
[1] Cavendish Laboratory, Cambridge
关键词
D O I
10.1016/0375-9601(69)91168-2
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The transverse susceptibility of a degenerate magnetic semiconductor is calculated in the random phase approximation. It is shown that the effect of spin independent scattering is small and that there is a large enhancement of the carrier effective mass. © 1969.
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页码:114 / &
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