FAST LOW-LOSS MICROSTRIP P-I-N PHASE-SHIFTER

被引:19
作者
GLANCE, B
机构
[1] Bell Laboratories, Crawford Hill Laboratory, Holmdel
关键词
D O I
10.1109/TMTT.1979.1129551
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 4-bit p-i-n phase shifter with low RF attentuation, fast switching time, and low switching power requirements is described. The circuit, made in microstripline, consists of four cells giving phase shifts of 180, 90, 45, and 22.5°, respectively. Each cell consists of a 3-dB coupler loaded by two p-i-n diodes. The transmission loss is 1.6 dB ± 0.2 dB over the operating bandwidth of 11.7-12.2 GHz for a biasing current of only 5 mA/cell. Switching time between phase states is 1 ns. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.
引用
收藏
页码:14 / 16
页数:3
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