ELECTRONIC-PROPERTIES OF SE-TREATED SIO2/GAAS INTERFACES

被引：13

作者：

KIKAWA, T ^{[1
]}

TAKATANI, S ^{[1
]}

TEZEN, Y ^{[1
]}

机构：

[1] BABCOCK HITACHI CO LTD,YOKOHAMA RES LAB,ISOGO KU,YOKOHAMA 235,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 22期

关键词：

D O I：

10.1063/1.106850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs metal-insulator-semiconductor diodes with a Se-treated interface and photochemical-vapor-deposited SiO2 are investigated. The diodes show little frequency dispersion in the capacitance at any accumulation bias, only a few percent between 1 kHz and 1 MHz. Analysis using Terman's method shows that the density of interface states near the midgap is drastically reduced. In addition, insertion of a Se-treated AlGaAs thin layer at the insulator/semiconductor interface is found to reduce the number of interface states near the conduction band minimum. These improved characteristics are preserved after annealing to 400-degrees-C.

引用

页码：2785 / 2787

页数：3

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