BIAS ANNEALING OF DOPED AMORPHOUS-SILICON

被引：27

作者：

STREET, RA

KAKALIOS, J

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 54卷 / 01期

关键词：

D O I：

10.1080/13642818608243173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L21 / L26

页数：6

共 10 条

[1]

AST DG, 1978, 14TH P INT C PHYS SE, P1159

[2] SINGLE AND DOUBLE CARRIER INJECTION IN A-SI-H [J].

DENBOER, W ;

GEERTS, MJ ;

ONDRIS, M ;

WENTINCK, HM .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :363-368

[3]

KRUHLER W, 1984, AIP C P, V120, P311

[4] OBSERVATION OF A REVERSIBLE FIELD-INDUCED DOPING EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW LETTERS, 1982, 48 (06) :421-424

[5] INTRINSIC DANGLING-BOND DENSITY IN HYDROGENATED AMORPHOUS-SILICON [J].

SMITH, ZE ;

WAGNER, S .

PHYSICAL REVIEW B, 1985, 32 (08) :5510-5513

[6] MEASUREMENTS OF THE ELECTRON-DENSITY IN N-TYPE A-SI-H [J].

STREET, RA ;

ZESCH, J .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (03) :L19-L22

[7] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

PHYSICAL REVIEW LETTERS, 1982, 49 (16) :1187-1190

[8]

STREET RA, 1986, UNPUB

[9]

STREET RA, 1985, 11TH P INT C AM LIQ, P1

[10] REVERSE BIAS AND HEAT-TREATMENT TO IMPROVE PERFORMANCE OF A-SI SOLAR-CELLS [J].

SWARTZ, GA .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :697-699

← 1 →