THERMAL GROOVING IN 3 PERCENT SILICON-IRON

被引:3
作者
COLOMBO, RL
HOWARD, J
机构
[1] Division of Materials Applications, National Physical Laboratory, Teddington, Middlesex
[2] Guest scientist from the Centro Sperimentale Metallurgico, Rome
关键词
D O I
10.1007/BF00551068
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The grain-boundary grooving technique has been used to determine the transport mechanism and the grain-boundary energies in randomly oriented and in textured 3% silicon-iron strips. The matter transport mechanism was found to be mainly volume diffusion, and the calculated diffusion coefficient was: Dm=0.15 exp [ -(47 500±6300)/R T] The average energy of incoherent large-angle grain-boundaries is shown to be 0.37 times the surface energy at 1150° C and 0.30 times at 1250° C: the difference is tentatively explained in terms of oxygen absorption and the contribution of evaporation condensation to the transport mechanism. Results from textured specimens suggest that all incoherent large-angle boundaries have approximately the same energy per unit surface. Lower energies are typical of low-angle boundaries and of coincident-site boundaries containing a sub-boundary consisting of a few dislocations. © 1969 Chapman and Hall.
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页码:753 / &
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