SURFACE-MORPHOLOGY DURING MULTILAYER EPITAXIAL-GROWTH OF GE(001)

被引：170

作者：

VANNOSTRAND, JE

CHEY, SJ

HASAN, MA

CAHILL, DG

GREENE, JE

机构：

[1] Department of Materials Science, Materials Research Laboratory, University of Illinois, Urbana

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.74.1127

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds are observed for single crystal films deposited at temperatures of 60-230°C and film thicknesses of 5 nm to 1 μm. With increasing growth temperature, the average separation between mounds becomes increasingly well defined, increasing from less than 10 nm at 60°C to nearly 200 nm at 230°C. This regular arrangement of growth mounds is inconsistent with the self-affine growth morphology predicted by most kinetic roughening models. © 1995 The American Physical Society.

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页码：1127 / 1130

页数：4

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