ALUMINUM POROUS OXIDE-GROWTH - ON THE ELECTRIC-CONDUCTIVITY OF THE BARRIER LAYER

被引：18

作者：

PALIBRODA, E

LUPSAN, A

PRUNEANU, S

SAVOS, M

机构：

[1] Institute of Isotopic and Molecular Technology, 3400 Cluj Napoca 5

来源：

THIN SOLID FILMS | 1995年 / 256卷 / 1-2期

关键词：

ALUMINUM OXIDE; ELECTROCHEMISTRY; GROWTH MECHANISM; SEMICONDUCTORS;

D O I：

10.1016/0040-6090(94)06293-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Earlier work supports the possibility of a discontinuous mechanism in the process of porous oxide growth on anodized aluminium. Further evidence is found from I-V curves of the aluminium-barrier layer-electrolyte system, to support this mechanism which replaces the interpretation of the barrier layer acting as an ionic conductor during the anodic process with a semiconductor process under electric breakdown conditions.

引用

页码：101 / 105

页数：5

共 43 条

[1] STUDY BY NUCLEAR MICROANALYSIS AND O-18 TRACER TECHNIQUES OF OXYGEN-TRANSPORT PROCESSES AND GROWTH LAWS FOR POROUS ANODIC OXIDE LAYERS ON ALUMINUM [J].